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| CHA5052 RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5052 is a three-stage monolithic high power amplifier. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a power P-HEMT process, 0.15m gate length, via holes through the substrate. It is supppplied in chip form 30 25 20 Vd1,2 RFi Vg1,2 Vd3 RFou Vg3Vd3 Gain and Return Losses versus frequency dB(S11), dB(S22), dB(S21) 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 5 6 7 8 9 10 11 12 13 14 15 16 17 18 dB(S11) dB(S21) dB(S22) Main Features Broadband performance 7-16GHz High gain: 21dB ESD protections (see page 10) 29dBm Output Power @ 1dB compression Typical 37dBm 3rd order intercept point DC power consumption, 700mA @ 5V Frequency (GHz) Typical on jig measurements Main Characteristics Tamb. = 25 Vd = 5V C, Symbol Fop Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Power Supply quiescent current Min 7 Typ Max 16 Unit GHz dB dBm mA G P1dB Id 21 29 700 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50527092 - 02 Apr 07 1/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5052 Electrical Characteristics 7-16GHz High Power Amplifier Tamb. = 25 Vd = 5 V and Id = 700 mA, CW biasing mode. These values are representative of C, on wafer measurements. Symbol Fop G_1 G_2 P1dB_1 P1dB_2 Psat_1 Psat_2 S11 S22 IP3 Vg Vd 1,2,3 Id Id_1dBc Id_sat Parameter Operating frequency range Small signal gain (7 to 14GHz) Small signal gain (14 to 16GHz) Output power at 1dB compression (7 to 14GHz) Output power at 1dB compression (14 to 16GHz) Saturated output power (7 to 14GHz) Saturated output power (14 to 16GHz) Input return loss Ouput return loss Output IP3 Negative gate bias voltage Positive drain bias voltage Power supply quiescent current (1) Power supply @1dB gain compression Power supply in saturation mode Min 7 21 17 29 26 30 29 2.0:1 2.2:1 37 -1.7 5 700 900 1000 dBm V V mA mA mA Typ Max 16 Unit GHz dB dB dBm dBm dBm dBm (1) This value is fixed by gate voltage Vg Absolute Maximum Ratings Tamb. = 25 (1) C Symbol Vd Id Vg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Power supply quiescent current Gate bias voltage Maximum input power overdrive Maximum channel temperature Operating temperature range Storage temperature range Values +5.5 800 -4 to +0.8 +15.0 +175 -40 to +85 -55 to +125 Unit V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHA50527092 - 02 Apr 07 2/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-16GHz High Power Amplifier Typical Measured Performance On jig measurement, Tamb = +25 Vd =+5V and Id = 700 mA C, CHA5052 Ref. : DSCHA50527092 - 02 Apr 07 3/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5052 7-16GHz High Power Amplifier Ref. : DSCHA50527092 - 02 Apr 07 4/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-16GHz High Power Amplifier C/I3 versus output power, Temp= +25deg 50 45 40 35 30 CHA5052 C/I3 (dBc) 25 20 15 10 5 0 3 5 7 9 11 13 15 17 19 21 23 25 27 RFfreq=7GHz RFfreq=9GHz RFfreq=11GHz RFfreq=13GHz RFfreq=15GHz Single tone output power (dBm) IP3 versus output power, Temp= +25deg 50 45 40 35 Output IP3 (dBm) 30 25 20 15 10 5 0 11 13 15 17 19 21 23 25 27 RFfreq=7GHz RFfreq=9GHz RFfreq=11GHz RFfreq=13GHz RFfreq=15GHz Single tone output power (dBm) Ref. : DSCHA50527092 - 02 Apr 07 5/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5052 7-16GHz High Power Amplifier Output IP3 versus output power @RFfreq=9GHz, Temp=-40/+25/+85 deg 50 45 40 Output IP3 (dBm) 35 30 25 20 15 10 5 0 11 13 15 17 19 21 23 25 27 29 Temp=-40 deg Temp=+85 deg Temp=+25 deg Single tone output power (dBm) Ref. : DSCHA50527092 - 02 Apr 07 6/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-16GHz High Power Amplifier Chip Mechanical Data and Pin references CHA5052 Ref. : DSCHA50527092 - 02 Apr 07 7/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5052 7-16GHz High Power Amplifier Assembly recommandations Note : Supply feed might be capacitively bypassed. 25m diameter gold wire is to be prefered. DC Pads Size : 100/100 m RF Pads Size : 125/200 m RF bounding wire length: 400m Chip thickness : 100 m. To Vd1,2 DC Drain supply To Vd3 DC Drain supply 10nF 10nF 120pF 120pF 120pF 120pF 120pF 10nF 10nF 10nF To Vg1,2 DC Gate supply To Vg3 DC Gate supply To Vd3 DC Drain supply Ref. : DSCHA50527092 - 02 Apr 07 8/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-16GHz High Power Amplifier Note CHA5052 Due to ESD protection, RFin and RFout are DC grounded, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vd1,2 RFin Vd3 RFout Vg3 Vd3 Vg1,2 Gate access are also protected with high-current shunt diodes Ref. : DSCHA50527092 - 02 Apr 07 9/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5052 7-16GHz High Power Amplifier Ordering Information Chip form : CHA5052-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50527092 - 02 Apr 07 10/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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